Technical Documents
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
338mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
110W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
15.3nC
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
6.2mm
Height
2.4mm
Length
6.6mm
Automotive Standard
No
Product Details
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast-recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
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Stock information temporarily unavailable.
SR 17,500.00
SR 7.00 Each (On a Reel of 2500) (ex VAT)
SR 20,125.00
SR 8.05 Each (On a Reel of 2500) (inc. VAT)
2500
SR 17,500.00
SR 7.00 Each (On a Reel of 2500) (ex VAT)
SR 20,125.00
SR 8.05 Each (On a Reel of 2500) (inc. VAT)
Stock information temporarily unavailable.
2500
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
338mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
110W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
15.3nC
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
6.2mm
Height
2.4mm
Length
6.6mm
Automotive Standard
No
Product Details
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast-recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
