Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
-10A
Maximum Collector Emitter Voltage Vceo
-50V
Package Type
SOT-89
Mount Type
Surface
Transistor Configuration
Single
Maximum Power Dissipation Pd
1.4W
Transistor Polarity
PNP
Minimum DC Current Gain hFE
80
Maximum Emitter Base Voltage VEBO
-5V
Minimum Operating Temperature
-65°C
Maximum Transition Frequency ft
1MHz
Pin Count
4
Maximum Operating Temperature
150°C
Length
4.6mm
Height
1.6mm
Standards/Approvals
No
Automotive Standard
No
Product Details
The 2STF2550 and 2STN2550 are PNP transistors manufactured using new PB-HCD (Power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
Stock information temporarily unavailable.
SR 2,450.00
SR 0.98 Each (On a Reel of 2500) (ex VAT)
SR 2,817.50
SR 1.127 Each (On a Reel of 2500) (inc. VAT)
2500
SR 2,450.00
SR 0.98 Each (On a Reel of 2500) (ex VAT)
SR 2,817.50
SR 1.127 Each (On a Reel of 2500) (inc. VAT)
Stock information temporarily unavailable.
2500
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
-10A
Maximum Collector Emitter Voltage Vceo
-50V
Package Type
SOT-89
Mount Type
Surface
Transistor Configuration
Single
Maximum Power Dissipation Pd
1.4W
Transistor Polarity
PNP
Minimum DC Current Gain hFE
80
Maximum Emitter Base Voltage VEBO
-5V
Minimum Operating Temperature
-65°C
Maximum Transition Frequency ft
1MHz
Pin Count
4
Maximum Operating Temperature
150°C
Length
4.6mm
Height
1.6mm
Standards/Approvals
No
Automotive Standard
No
Product Details
The 2STF2550 and 2STN2550 are PNP transistors manufactured using new PB-HCD (Power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.