Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
76 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Width
4.65mm
Transistor Material
Si
Length
10.51mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
15.49mm
Country of Origin
Taiwan, Province Of China
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
SR 19.01
Each (In a Pack of 5) (ex VAT)
SR 21.862
Each (In a Pack of 5) (inc VAT)
5
SR 19.01
Each (In a Pack of 5) (ex VAT)
SR 21.862
Each (In a Pack of 5) (inc VAT)
5
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
76 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Width
4.65mm
Transistor Material
Si
Length
10.51mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
15.49mm
Country of Origin
Taiwan, Province Of China
Product details