Dual N-Channel MOSFET, 1.3 A, 20 V, 6-Pin SOT-363 Vishay SI1922EDH-T1-GE3

RS Stock No.: 812-3091Brand: VishayManufacturers Part No.: SI1922EDH-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

263 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

1.6 nC @ 8 V

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

2

Height

1mm

Minimum Operating Temperature

-55 °C

Product details

Dual N-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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SR 1.98

Each (In a Pack of 50) (ex VAT)

SR 2.277

Each (In a Pack of 50) (inc. VAT)

Dual N-Channel MOSFET, 1.3 A, 20 V, 6-Pin SOT-363 Vishay SI1922EDH-T1-GE3
Select packaging type

SR 1.98

Each (In a Pack of 50) (ex VAT)

SR 2.277

Each (In a Pack of 50) (inc. VAT)

Dual N-Channel MOSFET, 1.3 A, 20 V, 6-Pin SOT-363 Vishay SI1922EDH-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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You may be interested in

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

263 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

1.6 nC @ 8 V

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

2

Height

1mm

Minimum Operating Temperature

-55 °C

Product details

Dual N-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in