Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
250 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
350 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
2 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.28 x 4.82 x 15.75mm
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SR 5.95
Each (In a Tube of 50) (ex VAT)
SR 6.842
Each (In a Tube of 50) (inc VAT)
50
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
250 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
350 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
2 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.28 x 4.82 x 15.75mm