Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
313 A
Maximum Drain Source Voltage
40 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
850 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
167 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
143 @ 10 V nC
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.9mm
Height
0.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
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SR 14.04
Each (On a Reel of 3000) (ex VAT)
SR 16.146
Each (On a Reel of 3000) (inc VAT)
3000
SR 14.04
Each (On a Reel of 3000) (ex VAT)
SR 16.146
Each (On a Reel of 3000) (inc VAT)
3000
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
313 A
Maximum Drain Source Voltage
40 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
850 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
167 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
143 @ 10 V nC
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.9mm
Height
0.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V