N-Channel MOSFET, 176 A, 100 V, 3-Pin TO 263 Infineon IPB020N10N5ATMA1

RS Stock No.: 171-1955Brand: InfineonManufacturers Part No.: IPB020N10N5ATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

176 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™ 5

Package Type

TO 263

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

11.05mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.31mm

Typical Gate Charge @ Vgs

168 nC @ 10 V

Height

4.57mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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SR 54.44

Each (In a Pack of 5) (ex VAT)

SR 62.606

Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 176 A, 100 V, 3-Pin TO 263 Infineon IPB020N10N5ATMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5SR 272.20
10SR 544.40
15SR 816.60
20SR 1,088.80
25SR 1,361.00
30SR 1,633.20
35SR 1,905.40
40SR 2,177.60
45SR 2,449.80
50SR 2,722.00
55SR 2,994.20
60SR 3,266.40
65SR 3,538.60
70SR 3,810.80
75SR 4,083.00

SR 54.44

Each (In a Pack of 5) (ex VAT)

SR 62.606

Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 176 A, 100 V, 3-Pin TO 263 Infineon IPB020N10N5ATMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5SR 272.20
10SR 544.40
15SR 816.60
20SR 1,088.80
25SR 1,361.00
30SR 1,633.20
35SR 1,905.40
40SR 2,177.60
45SR 2,449.80
50SR 2,722.00
55SR 2,994.20
60SR 3,266.40
65SR 3,538.60
70SR 3,810.80
75SR 4,083.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

176 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™ 5

Package Type

TO 263

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

11.05mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.31mm

Typical Gate Charge @ Vgs

168 nC @ 10 V

Height

4.57mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more