N-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON Infineon BSC020N03LSGATMA1

RS Stock No.: 133-6578Brand: InfineonManufacturers Part No.: BSC020N03LSGATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Series

OptiMOS 3

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

96 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Width

6.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.35mm

Typical Gate Charge @ Vgs

34 nC @ 4.5 V

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Product details

Infineon OptiMOS™3 Power MOSFETs, up to 40V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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SR 3.98

Each (On a Reel of 5000) (ex VAT)

SR 4.577

Each (On a Reel of 5000) (inc VAT)

N-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON Infineon BSC020N03LSGATMA1

5000

Available in multiples of 5000
5000SR 19,900.00
10000SR 39,800.00
15000SR 59,700.00
20000SR 79,600.00
25000SR 99,500.00
30000SR 119,400.00
35000SR 139,300.00
40000SR 159,200.00
45000SR 179,100.00
50000SR 199,000.00
55000SR 218,900.00
60000SR 238,800.00
65000SR 258,700.00
70000SR 278,600.00
75000SR 298,500.00

SR 3.98

Each (On a Reel of 5000) (ex VAT)

SR 4.577

Each (On a Reel of 5000) (inc VAT)

N-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON Infineon BSC020N03LSGATMA1
Stock information temporarily unavailable.

5000

Available in multiples of 5000
5000SR 19,900.00
10000SR 39,800.00
15000SR 59,700.00
20000SR 79,600.00
25000SR 99,500.00
30000SR 119,400.00
35000SR 139,300.00
40000SR 159,200.00
45000SR 179,100.00
50000SR 199,000.00
55000SR 218,900.00
60000SR 238,800.00
65000SR 258,700.00
70000SR 278,600.00
75000SR 298,500.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Series

OptiMOS 3

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

96 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Width

6.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.35mm

Typical Gate Charge @ Vgs

34 nC @ 4.5 V

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Product details

Infineon OptiMOS™3 Power MOSFETs, up to 40V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more