SiC MOSFET, 1200 V Wolfspeed CAB450M12XM3

RS Stock No.: 192-3386Brand: WolfspeedManufacturers Part No.: CAB450M12XM3
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Technical Document

Specifications

Brand

Wolfspeed

Maximum Drain Source Voltage

1200 V

Maximum Drain Source Resistance

4.6 mΩ

Maximum Gate Threshold Voltage

3.6V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

50 mW

Maximum Gate Source Voltage

-4 V, 19 V

Maximum Operating Temperature

+175 °C

Transistor Material

SiC

Length

80mm

Typical Gate Charge @ Vgs

1330 nC @ 4/15V

Width

53mm

Number of Elements per Chip

1

Minimum Operating Temperature

-40 °C

Height

15.75mm

Country of Origin

United States

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Stock information temporarily unavailable.

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SR 5,934.52

Each (ex VAT)

SR 6,824.70

Each (inc. VAT)

SiC MOSFET, 1200 V Wolfspeed CAB450M12XM3

1

Available in multiples of 1
1SR 5,934.52
2SR 11,869.04
3SR 17,803.56
4SR 23,738.08
5SR 29,672.60
6SR 35,607.12
7SR 41,541.64
8SR 47,476.16
9SR 53,410.68
10SR 59,345.20
11SR 65,279.72
12SR 71,214.24
13SR 77,148.76
14SR 83,083.28
15SR 89,017.80

SR 5,934.52

Each (ex VAT)

SR 6,824.70

Each (inc. VAT)

SiC MOSFET, 1200 V Wolfspeed CAB450M12XM3
Stock information temporarily unavailable.

1

Available in multiples of 1
1SR 5,934.52
2SR 11,869.04
3SR 17,803.56
4SR 23,738.08
5SR 29,672.60
6SR 35,607.12
7SR 41,541.64
8SR 47,476.16
9SR 53,410.68
10SR 59,345.20
11SR 65,279.72
12SR 71,214.24
13SR 77,148.76
14SR 83,083.28
15SR 89,017.80

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Wolfspeed

Maximum Drain Source Voltage

1200 V

Maximum Drain Source Resistance

4.6 mΩ

Maximum Gate Threshold Voltage

3.6V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

50 mW

Maximum Gate Source Voltage

-4 V, 19 V

Maximum Operating Temperature

+175 °C

Transistor Material

SiC

Length

80mm

Typical Gate Charge @ Vgs

1330 nC @ 4/15V

Width

53mm

Number of Elements per Chip

1

Minimum Operating Temperature

-40 °C

Height

15.75mm

Country of Origin

United States

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more