Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
19 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
76 nC @ 10 V
Width
9.65mm
Height
4.83mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
SR 77.80
SR 15.56 Each (In a Pack of 5) (ex VAT)
SR 89.47
SR 17.894 Each (In a Pack of 5) (inc. VAT)
Standard
5
SR 77.80
SR 15.56 Each (In a Pack of 5) (ex VAT)
SR 89.47
SR 17.894 Each (In a Pack of 5) (inc. VAT)
Standard
5
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Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
19 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
76 nC @ 10 V
Width
9.65mm
Height
4.83mm
Minimum Operating Temperature
-55 °C
Product details