Vishay E Series Dual N-Channel MOSFET, 34 A, 700 V, 3-Pin TO-247AD SQW33N65EF-GE3

RS Stock No.: 228-2974Brand: VishayManufacturers Part No.: SQW33N65EF-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

34 A

Maximum Drain Source Voltage

700 V

Series

E Series

Package Type

TO-247AD

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.109 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

2

Transistor Material

Si

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SR 443.70

SR 14.79 Each (In a Tube of 30) (ex VAT)

SR 510.26

SR 17.008 Each (In a Tube of 30) (inc. VAT)

Vishay E Series Dual N-Channel MOSFET, 34 A, 700 V, 3-Pin TO-247AD SQW33N65EF-GE3

30

Available in multiples of 30
30SR 443.70
60SR 887.40
90SR 1,331.10
120SR 1,774.80
150SR 2,218.50
180SR 2,662.20
210SR 3,105.90
240SR 3,549.60
270SR 3,993.30
300SR 4,437.00
330SR 4,880.70
360SR 5,324.40
390SR 5,768.10
420SR 6,211.80
450SR 6,655.50

SR 443.70

SR 14.79 Each (In a Tube of 30) (ex VAT)

SR 510.26

SR 17.008 Each (In a Tube of 30) (inc. VAT)

Vishay E Series Dual N-Channel MOSFET, 34 A, 700 V, 3-Pin TO-247AD SQW33N65EF-GE3

Stock information temporarily unavailable.

30

Available in multiples of 30
30SR 443.70
60SR 887.40
90SR 1,331.10
120SR 1,774.80
150SR 2,218.50
180SR 2,662.20
210SR 3,105.90
240SR 3,549.60
270SR 3,993.30
300SR 4,437.00
330SR 4,880.70
360SR 5,324.40
390SR 5,768.10
420SR 6,211.80
450SR 6,655.50

Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

34 A

Maximum Drain Source Voltage

700 V

Series

E Series

Package Type

TO-247AD

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.109 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

2

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more