Vishay E N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin IPAK SIHU6N80AE-GE3

RS Stock No.: 200-6869Brand: VishayManufacturers Part No.: SIHU6N80AE-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

3.2 A, 5 A

Maximum Drain Source Voltage

850 V

Series

E

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.95 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

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SR 170.25

SR 6.81 Each (In a Pack of 25) (ex VAT)

SR 195.79

SR 7.832 Each (In a Pack of 25) (inc. VAT)

Vishay E N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin IPAK SIHU6N80AE-GE3

SR 170.25

SR 6.81 Each (In a Pack of 25) (ex VAT)

SR 195.79

SR 7.832 Each (In a Pack of 25) (inc. VAT)

Vishay E N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin IPAK SIHU6N80AE-GE3

Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.

Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.

Ideate. Create. Collaborate

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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

3.2 A, 5 A

Maximum Drain Source Voltage

850 V

Series

E

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.95 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more