Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
400 V
Package Type
TO-220AB
Series
D Series
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
9 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
10.51mm
Number of Elements per Chip
1
Width
4.65mm
Minimum Operating Temperature
-55 °C
Height
9.01mm
Product details
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
P.O.A.
Each (In a Tube of 50) (ex VAT)
50
P.O.A.
Each (In a Tube of 50) (ex VAT)
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
50
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
400 V
Package Type
TO-220AB
Series
D Series
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
9 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
10.51mm
Number of Elements per Chip
1
Width
4.65mm
Minimum Operating Temperature
-55 °C
Height
9.01mm
Product details


