Vishay E Series N-Channel MOSFET, 47 A, 600 V, 3-Pin TO-247AC SiHG47N60E-GE3
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
47 A
Maximum Drain Source Voltage
600 V
Series
E Series
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
64 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
357 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Typical Gate Charge @ Vgs
147 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.31mm
Minimum Operating Temperature
-55 °C
Height
20.7mm
Product details
N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor
The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).
Features
Low figure-of-merit (FOM) RDS(on) x Qg
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses
MOSFET Transistors, Vishay Semiconductor
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SR 55.94
SR 55.94 Each (ex VAT)
SR 64.33
SR 64.33 Each (inc. VAT)
Standard
1
SR 55.94
SR 55.94 Each (ex VAT)
SR 64.33
SR 64.33 Each (inc. VAT)
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
Standard
1
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
47 A
Maximum Drain Source Voltage
600 V
Series
E Series
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
64 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
357 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Typical Gate Charge @ Vgs
147 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.31mm
Minimum Operating Temperature
-55 °C
Height
20.7mm
Product details
N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor
The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).
Features
Low figure-of-merit (FOM) RDS(on) x Qg
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products