Vishay E N-Channel MOSFET, 8 A, 800 V, 3-Pin D2PAK SIHB11N80AE-GE3
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
800 V
Package Type
D2PAK (TO-263)
Series
E
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.391 Ω
Maximum Gate Threshold Voltage
2 → 4V
Number of Elements per Chip
1
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P.O.A.
Each (In a Tube of 50) (ex VAT)
50
P.O.A.
Each (In a Tube of 50) (ex VAT)
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
50
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
800 V
Package Type
D2PAK (TO-263)
Series
E
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.391 Ω
Maximum Gate Threshold Voltage
2 → 4V
Number of Elements per Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products