Vishay Dual N/P-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 SIA517DJ-T1-GE3

RS Stock No.: 814-1225Brand: VishayManufacturers Part No.: SIA517DJ-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

4.3 A, 4.5 A

Maximum Drain Source Voltage

12 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

65 mΩ, 170 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

6.5 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Width

2.15mm

Transistor Material

Si

Number of Elements per Chip

2

Length

2.15mm

Typical Gate Charge @ Vgs

13.1 nC @ 8 V, 9.7 nC @ 8 V

Maximum Operating Temperature

+150 °C

Height

0.8mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

Dual N/P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

SR 53.00

SR 2.65 Each (In a Pack of 20) (ex VAT)

SR 60.95

SR 3.048 Each (In a Pack of 20) (inc. VAT)

Vishay Dual N/P-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 SIA517DJ-T1-GE3
Select packaging type

SR 53.00

SR 2.65 Each (In a Pack of 20) (ex VAT)

SR 60.95

SR 3.048 Each (In a Pack of 20) (inc. VAT)

Vishay Dual N/P-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 SIA517DJ-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

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Technical Document

Specifications

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

4.3 A, 4.5 A

Maximum Drain Source Voltage

12 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

65 mΩ, 170 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

6.5 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Width

2.15mm

Transistor Material

Si

Number of Elements per Chip

2

Length

2.15mm

Typical Gate Charge @ Vgs

13.1 nC @ 8 V, 9.7 nC @ 8 V

Maximum Operating Temperature

+150 °C

Height

0.8mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

Dual N/P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more