Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
25 nC @ 10 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
P.O.A.
Each (Supplied in a Tube) (ex VAT)
Production pack (Tube)
10
P.O.A.
Each (Supplied in a Tube) (ex VAT)
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
Production pack (Tube)
10
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
25 nC @ 10 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


