Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
100 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
6.73mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Width
2.38mm
Transistor Material
Si
Height
6.22mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
SR 40.30
SR 4.03 Each (In a Pack of 10) (ex VAT)
SR 46.34
SR 4.634 Each (In a Pack of 10) (inc. VAT)
Standard
10
SR 40.30
SR 4.03 Each (In a Pack of 10) (ex VAT)
SR 46.34
SR 4.634 Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
100 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
6.73mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Width
2.38mm
Transistor Material
Si
Height
6.22mm
Minimum Operating Temperature
-55 °C
Product details


