Vishay N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-247AC IRFPE30PBF
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
800 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
78 nC @ 10 V
Width
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Maximum Operating Temperature
+150 °C
Height
20.7mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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SR 29.09
SR 29.09 Each (ex VAT)
SR 33.45
SR 33.45 Each (inc. VAT)
Standard
1
SR 29.09
SR 29.09 Each (ex VAT)
SR 33.45
SR 33.45 Each (inc. VAT)
Stock information temporarily unavailable.
Standard
1
Stock information temporarily unavailable.
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Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
800 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
78 nC @ 10 V
Width
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Maximum Operating Temperature
+150 °C
Height
20.7mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products