Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
4.7mm
Length
10.41mm
Typical Gate Charge @ Vgs
38 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
9.01mm
SR 387.00
SR 7.74 Each (In a Tube of 50) (ex VAT)
SR 445.05
SR 8.901 Each (In a Tube of 50) (inc. VAT)
50
SR 387.00
SR 7.74 Each (In a Tube of 50) (ex VAT)
SR 445.05
SR 8.901 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
4.7mm
Length
10.41mm
Typical Gate Charge @ Vgs
38 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
9.01mm


