Vishay Siliconix TrenchFET N-Channel MOSFET, 150 A, 40 V, 7-Pin D2PAK SQM40022EM_GE3
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Typical Gate Charge @ Vgs
106 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.83mm
Height
11.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Automotive Standard
AEC-Q101
Country of Origin
Taiwan, Province Of China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
SR 5,592.00
SR 6.99 Each (On a Reel of 800) (ex VAT)
SR 6,430.80
SR 8.038 Each (On a Reel of 800) (inc. VAT)
800
SR 5,592.00
SR 6.99 Each (On a Reel of 800) (ex VAT)
SR 6,430.80
SR 8.038 Each (On a Reel of 800) (inc. VAT)
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
800
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Typical Gate Charge @ Vgs
106 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.83mm
Height
11.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Automotive Standard
AEC-Q101
Country of Origin
Taiwan, Province Of China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products