Vishay Siliconix TrenchFET N-Channel MOSFET, 80 A, 25 V, 8-Pin 1212 SiSS02DN-T1-GE3

RS Stock No.: 178-3899Brand: Vishay SiliconixManufacturers Part No.: SiSS02DN-T1-GE3
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Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

25 V

Series

TrenchFET

Package Type

1212

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

65.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +16 V

Number of Elements per Chip

1

Width

3.15mm

Length

3.15mm

Typical Gate Charge @ Vgs

55 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.07mm

Country of Origin

China

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P.O.A.

Each (In a Pack of 10) (ex VAT)

Vishay Siliconix TrenchFET N-Channel MOSFET, 80 A, 25 V, 8-Pin 1212 SiSS02DN-T1-GE3
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20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
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70P.O.A.
80P.O.A.
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100P.O.A.
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120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

P.O.A.

Each (In a Pack of 10) (ex VAT)

Vishay Siliconix TrenchFET N-Channel MOSFET, 80 A, 25 V, 8-Pin 1212 SiSS02DN-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

Stock information temporarily unavailable.

Please check again later.

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Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

25 V

Series

TrenchFET

Package Type

1212

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

65.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +16 V

Number of Elements per Chip

1

Width

3.15mm

Length

3.15mm

Typical Gate Charge @ Vgs

55 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.07mm

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more