Toshiba U-MOSVIII-H N-Channel MOSFET, 22 A, 80 V, 8-Pin TSON TPN30008NH,LQ(S

RS Stock No.: 133-2814Brand: ToshibaManufacturers Part No.: TPN30008NH,LQ(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

80 V

Series

U-MOSVIII-H

Package Type

TSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

30 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

27 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

3.1mm

Length

3.1mm

Typical Gate Charge @ Vgs

11 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

0.85mm

Product details

MOSFET Transistors, Toshiba

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SR 40.20

SR 2.01 Each (In a Pack of 20) (ex VAT)

SR 46.23

SR 2.312 Each (In a Pack of 20) (inc. VAT)

Toshiba U-MOSVIII-H N-Channel MOSFET, 22 A, 80 V, 8-Pin TSON TPN30008NH,LQ(S

SR 40.20

SR 2.01 Each (In a Pack of 20) (ex VAT)

SR 46.23

SR 2.312 Each (In a Pack of 20) (inc. VAT)

Toshiba U-MOSVIII-H N-Channel MOSFET, 22 A, 80 V, 8-Pin TSON TPN30008NH,LQ(S

Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.

Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.

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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

80 V

Series

U-MOSVIII-H

Package Type

TSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

30 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

27 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

3.1mm

Length

3.1mm

Typical Gate Charge @ Vgs

11 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

0.85mm

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more