N-Channel MOSFET, 6.8 A, 650 V, 3-Pin DPAK Toshiba TK7P65W,RQ(S

RS Stock No.: 133-2801Brand: ToshibaManufacturers Part No.: TK7P65W,RQ(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

6.8 A

Maximum Drain Source Voltage

650 V

Series

DTMOSIV

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

6.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Height

2.3mm

Forward Diode Voltage

1.7V

Country of Origin

Japan

Product details

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

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SR 14.60

SR 1.46 Each (In a Pack of 10) (ex VAT)

SR 16.79

SR 1.679 Each (In a Pack of 10) (inc. VAT)

N-Channel MOSFET, 6.8 A, 650 V, 3-Pin DPAK Toshiba TK7P65W,RQ(S

10

Available in multiples of 10
10SR 14.60
20SR 29.20
30SR 43.80
40SR 58.40
50SR 73.00
60SR 87.60
70SR 102.20
80SR 116.80
90SR 131.40
100SR 146.00
110SR 160.60
120SR 175.20
130SR 189.80
140SR 204.40
150SR 219.00

SR 14.60

SR 1.46 Each (In a Pack of 10) (ex VAT)

SR 16.79

SR 1.679 Each (In a Pack of 10) (inc. VAT)

N-Channel MOSFET, 6.8 A, 650 V, 3-Pin DPAK Toshiba TK7P65W,RQ(S
Stock information temporarily unavailable.

10

Available in multiples of 10
10SR 14.60
20SR 29.20
30SR 43.80
40SR 58.40
50SR 73.00
60SR 87.60
70SR 102.20
80SR 116.80
90SR 131.40
100SR 146.00
110SR 160.60
120SR 175.20
130SR 189.80
140SR 204.40
150SR 219.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

6.8 A

Maximum Drain Source Voltage

650 V

Series

DTMOSIV

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

6.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Height

2.3mm

Forward Diode Voltage

1.7V

Country of Origin

Japan

Product details

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more