Toshiba TK N-Channel MOSFET, 56 A, 120 V, 3-Pin TO-220SIS TK56A12N1,S4X(S

RS Stock No.: 168-7983Brand: ToshibaManufacturers Part No.: TK56A12N1,S4X(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

56 A

Maximum Drain Source Voltage

120 V

Series

TK

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.5mm

Length

10mm

Typical Gate Charge @ Vgs

69 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

15mm

Country of Origin

China

Product details

MOSFET Transistors, Toshiba

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SR 401.50

SR 8.03 Each (In a Tube of 50) (ex VAT)

SR 461.72

SR 9.234 Each (In a Tube of 50) (inc. VAT)

Toshiba TK N-Channel MOSFET, 56 A, 120 V, 3-Pin TO-220SIS TK56A12N1,S4X(S

50

Available in multiples of 50
50SR 401.50
100SR 803.00
150SR 1,204.50
200SR 1,606.00
250SR 2,007.50
300SR 2,409.00
350SR 2,810.50
400SR 3,212.00
450SR 3,613.50
500SR 4,015.00
550SR 4,416.50
600SR 4,818.00
650SR 5,219.50
700SR 5,621.00
750SR 6,022.50

SR 401.50

SR 8.03 Each (In a Tube of 50) (ex VAT)

SR 461.72

SR 9.234 Each (In a Tube of 50) (inc. VAT)

Toshiba TK N-Channel MOSFET, 56 A, 120 V, 3-Pin TO-220SIS TK56A12N1,S4X(S

Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.

50

Available in multiples of 50
50SR 401.50
100SR 803.00
150SR 1,204.50
200SR 1,606.00
250SR 2,007.50
300SR 2,409.00
350SR 2,810.50
400SR 3,212.00
450SR 3,613.50
500SR 4,015.00
550SR 4,416.50
600SR 4,818.00
650SR 5,219.50
700SR 5,621.00
750SR 6,022.50

Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

56 A

Maximum Drain Source Voltage

120 V

Series

TK

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.5mm

Length

10mm

Typical Gate Charge @ Vgs

69 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

15mm

Country of Origin

China

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more