Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Package Type
TO-247
Series
DTMOSIV
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
175 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
165 W
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
55 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
5.02mm
Length
15.94mm
Forward Diode Voltage
1.7V
Height
20.95mm
Country of Origin
Japan
Product details
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
SR 88.50
SR 17.70 Each (In a Pack of 5) (ex VAT)
SR 101.78
SR 20.355 Each (In a Pack of 5) (inc. VAT)
5
SR 88.50
SR 17.70 Each (In a Pack of 5) (ex VAT)
SR 101.78
SR 20.355 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
5
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Package Type
TO-247
Series
DTMOSIV
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
175 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
165 W
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
55 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
5.02mm
Length
15.94mm
Forward Diode Voltage
1.7V
Height
20.95mm
Country of Origin
Japan
Product details


