N-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK Toshiba TK15S04N1L,LQ(O

RS Stock No.: 133-2798Brand: ToshibaManufacturers Part No.: TK15S04N1L,LQ(O
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Series

U-MOSVIII-H

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

37 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

46 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.5mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Width

5.5mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

2.3mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

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SR 12.20

SR 2.44 Each (In a Pack of 5) (ex VAT)

SR 14.03

SR 2.806 Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK Toshiba TK15S04N1L,LQ(O
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5SR 12.20
10SR 24.40
15SR 36.60
20SR 48.80
25SR 61.00
30SR 73.20
35SR 85.40
40SR 97.60
45SR 109.80
50SR 122.00
55SR 134.20
60SR 146.40
65SR 158.60
70SR 170.80
75SR 183.00

SR 12.20

SR 2.44 Each (In a Pack of 5) (ex VAT)

SR 14.03

SR 2.806 Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK Toshiba TK15S04N1L,LQ(O
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5SR 12.20
10SR 24.40
15SR 36.60
20SR 48.80
25SR 61.00
30SR 73.20
35SR 85.40
40SR 97.60
45SR 109.80
50SR 122.00
55SR 134.20
60SR 146.40
65SR 158.60
70SR 170.80
75SR 183.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Series

U-MOSVIII-H

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

37 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

46 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.5mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Width

5.5mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

2.3mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more