Toshiba TK090A65Z Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220SIS TK090A65Z,S4X(S

RS Stock No.: 206-9724Brand: ToshibaManufacturers Part No.: TK090A65Z,S4X(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

650 V

Series

TK090A65Z

Package Type

TO-220SIS

Pin Count

3

Maximum Drain Source Resistance

0.09 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon

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SR 94.24

SR 47.12 Each (In a Pack of 2) (ex VAT)

SR 108.38

SR 54.188 Each (In a Pack of 2) (inc. VAT)

Toshiba TK090A65Z Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220SIS TK090A65Z,S4X(S

2

Available in multiples of 2
2SR 94.24
4SR 188.48
6SR 282.72
8SR 376.96
10SR 471.20
12SR 565.44
14SR 659.68
16SR 753.92
18SR 848.16
20SR 942.40
22SR 1,036.64
24SR 1,130.88
26SR 1,225.12
28SR 1,319.36
30SR 1,413.60

SR 94.24

SR 47.12 Each (In a Pack of 2) (ex VAT)

SR 108.38

SR 54.188 Each (In a Pack of 2) (inc. VAT)

Toshiba TK090A65Z Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220SIS TK090A65Z,S4X(S

Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.

2

Available in multiples of 2
2SR 94.24
4SR 188.48
6SR 282.72
8SR 376.96
10SR 471.20
12SR 565.44
14SR 659.68
16SR 753.92
18SR 848.16
20SR 942.40
22SR 1,036.64
24SR 1,130.88
26SR 1,225.12
28SR 1,319.36
30SR 1,413.60

Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

650 V

Series

TK090A65Z

Package Type

TO-220SIS

Pin Count

3

Maximum Drain Source Resistance

0.09 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more