Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
650 V
Series
TK090A65Z
Package Type
TO-220SIS
Pin Count
3
Maximum Drain Source Resistance
0.09 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon
SR 1,457.50
SR 29.15 Each (In a Tube of 50) (ex VAT)
SR 1,676.12
SR 33.522 Each (In a Tube of 50) (inc. VAT)
50
SR 1,457.50
SR 29.15 Each (In a Tube of 50) (ex VAT)
SR 1,676.12
SR 33.522 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
50
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
650 V
Series
TK090A65Z
Package Type
TO-220SIS
Pin Count
3
Maximum Drain Source Resistance
0.09 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon


