Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Package Type
US6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.2e+006 Ω
Maximum Gate Threshold Voltage
2.1V
Number of Elements per Chip
2
Transistor Material
Silicon
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
200
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
200
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Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Package Type
US6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.2e+006 Ω
Maximum Gate Threshold Voltage
2.1V
Number of Elements per Chip
2
Transistor Material
Silicon