Toshiba SSM3 N-Channel MOSFET, 180 mA, 20 V, 3-Pin VESM SSM3K35MFV(TPL3)

RS Stock No.: 695-4789Brand: ToshibaManufacturers Part No.: SSM3K35MFV(TPL3)
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

180 mA

Maximum Drain Source Voltage

20 V

Series

SSM3

Package Type

VESM

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

150 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

1.2mm

Width

0.8mm

Minimum Operating Temperature

-55 °C

Height

0.5mm

Country of Origin

Japan

Product details

MOSFET N-Channel, SSM3K Series, Toshiba

MOSFET Transistors, Toshiba

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Stock information temporarily unavailable.

SR 7.40

SR 0.74 Each (In a Pack of 10) (ex VAT)

SR 8.51

SR 0.851 Each (In a Pack of 10) (inc. VAT)

Toshiba SSM3 N-Channel MOSFET, 180 mA, 20 V, 3-Pin VESM SSM3K35MFV(TPL3)

10

Available in multiples of 10
10SR 7.40
20SR 14.80
30SR 22.20
40SR 29.60
50SR 37.00
60SR 44.40
70SR 51.80
80SR 59.20
90SR 66.60
100SR 74.00
110SR 81.40
120SR 88.80
130SR 96.20
140SR 103.60
150SR 111.00

SR 7.40

SR 0.74 Each (In a Pack of 10) (ex VAT)

SR 8.51

SR 0.851 Each (In a Pack of 10) (inc. VAT)

Toshiba SSM3 N-Channel MOSFET, 180 mA, 20 V, 3-Pin VESM SSM3K35MFV(TPL3)

Stock information temporarily unavailable.

10

Available in multiples of 10
10SR 7.40
20SR 14.80
30SR 22.20
40SR 29.60
50SR 37.00
60SR 44.40
70SR 51.80
80SR 59.20
90SR 66.60
100SR 74.00
110SR 81.40
120SR 88.80
130SR 96.20
140SR 103.60
150SR 111.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

180 mA

Maximum Drain Source Voltage

20 V

Series

SSM3

Package Type

VESM

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

150 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

1.2mm

Width

0.8mm

Minimum Operating Temperature

-55 °C

Height

0.5mm

Country of Origin

Japan

Product details

MOSFET N-Channel, SSM3K Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more