Toshiba P-Channel MOSFET, 4 A, 30 V, 3-Pin SOT-23 SSM3J334R,LF(T

RS Stock No.: 144-5260Brand: ToshibaManufacturers Part No.: SSM3J334R,LF(T
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Technical Document

Specifications

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

136 mΩ

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Number of Elements per Chip

1

Width

1.8mm

Length

2.9mm

Typical Gate Charge @ Vgs

5.9 nC @ -10 V nC

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

0.8mm

Country of Origin

Japan

Product details

MOSFET P-Channel, SSM3J Series, Toshiba

MOSFET Transistors, Toshiba

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SR 30.30

SR 1.01 Each (In a Pack of 30) (ex VAT)

SR 34.84

SR 1.162 Each (In a Pack of 30) (inc. VAT)

Toshiba P-Channel MOSFET, 4 A, 30 V, 3-Pin SOT-23 SSM3J334R,LF(T

30

Available in multiples of 30
30SR 30.30
60SR 60.60
90SR 90.90
120SR 121.20
150SR 151.50
180SR 181.80
210SR 212.10
240SR 242.40
270SR 272.70
300SR 303.00
330SR 333.30
360SR 363.60
390SR 393.90
420SR 424.20
450SR 454.50

SR 30.30

SR 1.01 Each (In a Pack of 30) (ex VAT)

SR 34.84

SR 1.162 Each (In a Pack of 30) (inc. VAT)

Toshiba P-Channel MOSFET, 4 A, 30 V, 3-Pin SOT-23 SSM3J334R,LF(T

Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.

30

Available in multiples of 30
30SR 30.30
60SR 60.60
90SR 90.90
120SR 121.20
150SR 151.50
180SR 181.80
210SR 212.10
240SR 242.40
270SR 272.70
300SR 303.00
330SR 333.30
360SR 363.60
390SR 393.90
420SR 424.20
450SR 454.50

Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

136 mΩ

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Number of Elements per Chip

1

Width

1.8mm

Length

2.9mm

Typical Gate Charge @ Vgs

5.9 nC @ -10 V nC

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

0.8mm

Country of Origin

Japan

Product details

MOSFET P-Channel, SSM3J Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more