P-Channel MOSFET, 4 A, 30 V, 3-Pin SOT-23 Toshiba SSM3J334R,LF(T

RS Stock No.: 144-5260Brand: ToshibaManufacturers Part No.: SSM3J334R,LF(T
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Technical Document

Specifications

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

136 mΩ

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Width

1.8mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.9mm

Typical Gate Charge @ Vgs

5.9 nC @ -10 V nC

Height

0.8mm

Country of Origin

Japan

Product details

MOSFET P-Channel, SSM3J Series, Toshiba

MOSFET Transistors, Toshiba

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SR 1.10

Each (In a Pack of 30) (ex VAT)

SR 1.265

Each (In a Pack of 30) (inc. VAT)

P-Channel MOSFET, 4 A, 30 V, 3-Pin SOT-23 Toshiba SSM3J334R,LF(T

30

Available in multiples of 30
30SR 33.00
60SR 66.00
90SR 99.00
120SR 132.00
150SR 165.00
180SR 198.00
210SR 231.00
240SR 264.00
270SR 297.00
300SR 330.00
330SR 363.00
360SR 396.00
390SR 429.00
420SR 462.00
450SR 495.00

SR 1.10

Each (In a Pack of 30) (ex VAT)

SR 1.265

Each (In a Pack of 30) (inc. VAT)

P-Channel MOSFET, 4 A, 30 V, 3-Pin SOT-23 Toshiba SSM3J334R,LF(T
Stock information temporarily unavailable.

30

Available in multiples of 30
30SR 33.00
60SR 66.00
90SR 99.00
120SR 132.00
150SR 165.00
180SR 198.00
210SR 231.00
240SR 264.00
270SR 297.00
300SR 330.00
330SR 363.00
360SR 396.00
390SR 429.00
420SR 462.00
450SR 495.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

136 mΩ

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Width

1.8mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.9mm

Typical Gate Charge @ Vgs

5.9 nC @ -10 V nC

Height

0.8mm

Country of Origin

Japan

Product details

MOSFET P-Channel, SSM3J Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more