Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
800 V
Series
2SK
Package Type
SC-67
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
45 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Forward Diode Voltage
1.7V
Country of Origin
Malaysia
Product details
MOSFET N-Channel, 2SK Series, Toshiba
MOSFET Transistors, Toshiba
P.O.A.
Each (In a Pack of 5) (ex VAT)
5
P.O.A.
Each (In a Pack of 5) (ex VAT)
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
5
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
800 V
Series
2SK
Package Type
SC-67
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
45 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Forward Diode Voltage
1.7V
Country of Origin
Malaysia
Product details


