Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
230 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
230 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
15.5 x 4.5 x 20mm
Country of Origin
China
Product details
NPN Power Transistors, Toshiba
Bipolar Transistors, Toshiba
SR 61.55
SR 12.31 Each (In a Pack of 5) (ex VAT)
SR 70.78
SR 14.156 Each (In a Pack of 5) (inc. VAT)
5
SR 61.55
SR 12.31 Each (In a Pack of 5) (ex VAT)
SR 70.78
SR 14.156 Each (In a Pack of 5) (inc. VAT)
5
Stock information temporarily unavailable.
Please check again later.
Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
230 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
230 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
15.5 x 4.5 x 20mm
Country of Origin
China
Product details