Toshiba 2SC5200N(S1,E,S) NPN Transistor, 15 A, 230 V, 3-Pin TO-3P

RS Stock No.: 890-2689Brand: ToshibaManufacturers Part No.: 2SC5200N(S1,E,S)
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Technical Document

Specifications

Brand

Toshiba

Transistor Type

NPN

Maximum DC Collector Current

15 A

Maximum Collector Emitter Voltage

230 V

Package Type

TO-3P

Mounting Type

Through Hole

Maximum Power Dissipation

150 W

Minimum DC Current Gain

55

Transistor Configuration

Single

Maximum Collector Base Voltage

230 V

Maximum Emitter Base Voltage

5 V

Pin Count

3

Number of Elements per Chip

1

Dimensions

15.5 x 4.5 x 20mm

Maximum Operating Temperature

+150 °C

Country of Origin

China

Product details

NPN Power Transistors, Toshiba

Bipolar Transistors, Toshiba

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SR 13.36

Each (In a Pack of 5) (ex VAT)

SR 15.364

Each (In a Pack of 5) (inc. VAT)

Toshiba 2SC5200N(S1,E,S) NPN Transistor, 15 A, 230 V, 3-Pin TO-3P

5

Available in multiples of 5
5SR 66.80
10SR 133.60
15SR 200.40
20SR 267.20
25SR 334.00
30SR 400.80
35SR 467.60
40SR 534.40
45SR 601.20
50SR 668.00
55SR 734.80
60SR 801.60
65SR 868.40
70SR 935.20
75SR 1,002.00

SR 13.36

Each (In a Pack of 5) (ex VAT)

SR 15.364

Each (In a Pack of 5) (inc. VAT)

Toshiba 2SC5200N(S1,E,S) NPN Transistor, 15 A, 230 V, 3-Pin TO-3P
Stock information temporarily unavailable.

5

Available in multiples of 5
5SR 66.80
10SR 133.60
15SR 200.40
20SR 267.20
25SR 334.00
30SR 400.80
35SR 467.60
40SR 534.40
45SR 601.20
50SR 668.00
55SR 734.80
60SR 801.60
65SR 868.40
70SR 935.20
75SR 1,002.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Transistor Type

NPN

Maximum DC Collector Current

15 A

Maximum Collector Emitter Voltage

230 V

Package Type

TO-3P

Mounting Type

Through Hole

Maximum Power Dissipation

150 W

Minimum DC Current Gain

55

Transistor Configuration

Single

Maximum Collector Base Voltage

230 V

Maximum Emitter Base Voltage

5 V

Pin Count

3

Number of Elements per Chip

1

Dimensions

15.5 x 4.5 x 20mm

Maximum Operating Temperature

+150 °C

Country of Origin

China

Product details

NPN Power Transistors, Toshiba

Bipolar Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more