Technical Document
Specifications
Brand
Texas InstrumentsTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
15 V
Package Type
SOIC
Mounting Type
Surface Mount
Maximum Power Dissipation
750 mW
Transistor Configuration
Complex
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
120 MHz
Pin Count
14
Number of Elements per Chip
5
Dimensions
1.45 x 8.64 x 3.91mm
Maximum Operating Temperature
+85 °C
Product details
NPN Transistor Array LM3046M
Five general purpose transistors which may be used as discrete transistors in conventional circuits; however, they provide the inherent integrated circuit advantages of close electrical and thermal matching for use in temperature compensated amplifiers.
5 NPN transistors on a common substrate, two connected internally as a differential pair.
Two pairs have matched Vbe within ±5mV (typically ±0.5mV)
Suitable for signal processing, switching systems etc. d.c. to 120 MHz
Bipolar Transistors, Texas Instruments
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SR 5.83
Each (Supplied in a Tube) (ex VAT)
SR 6.704
Each (Supplied in a Tube) (inc VAT)
10
SR 5.83
Each (Supplied in a Tube) (ex VAT)
SR 6.704
Each (Supplied in a Tube) (inc VAT)
10
Technical Document
Specifications
Brand
Texas InstrumentsTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
15 V
Package Type
SOIC
Mounting Type
Surface Mount
Maximum Power Dissipation
750 mW
Transistor Configuration
Complex
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
120 MHz
Pin Count
14
Number of Elements per Chip
5
Dimensions
1.45 x 8.64 x 3.91mm
Maximum Operating Temperature
+85 °C
Product details
NPN Transistor Array LM3046M
Five general purpose transistors which may be used as discrete transistors in conventional circuits; however, they provide the inherent integrated circuit advantages of close electrical and thermal matching for use in temperature compensated amplifiers.
5 NPN transistors on a common substrate, two connected internally as a differential pair.
Two pairs have matched Vbe within ±5mV (typically ±0.5mV)
Suitable for signal processing, switching systems etc. d.c. to 120 MHz