STMicroelectronics MDmesh N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 STW26NM60N

RS Stock No.: 103-1991Brand: STMicroelectronicsManufacturers Part No.: STW26NM60N
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Series

MDmesh

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Length

15.75mm

Typical Gate Charge @ Vgs

60 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

5.15mm

Transistor Material

Si

Height

20.15mm

Product details

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

SR 797.40

SR 26.58 Each (In a Tube of 30) (ex VAT)

SR 917.01

SR 30.567 Each (In a Tube of 30) (inc. VAT)

STMicroelectronics MDmesh N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 STW26NM60N

30

Available in multiples of 30
30SR 797.40
60SR 1,594.80
90SR 2,392.20
120SR 3,189.60
150SR 3,987.00
180SR 4,784.40
210SR 5,581.80
240SR 6,379.20
270SR 7,176.60
300SR 7,974.00
330SR 8,771.40
360SR 9,568.80
390SR 10,366.20
420SR 11,163.60
450SR 11,961.00

SR 797.40

SR 26.58 Each (In a Tube of 30) (ex VAT)

SR 917.01

SR 30.567 Each (In a Tube of 30) (inc. VAT)

STMicroelectronics MDmesh N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 STW26NM60N

Stock information temporarily unavailable.

30

Available in multiples of 30
30SR 797.40
60SR 1,594.80
90SR 2,392.20
120SR 3,189.60
150SR 3,987.00
180SR 4,784.40
210SR 5,581.80
240SR 6,379.20
270SR 7,176.60
300SR 7,974.00
330SR 8,771.40
360SR 9,568.80
390SR 10,366.20
420SR 11,163.60
450SR 11,961.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Series

MDmesh

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Length

15.75mm

Typical Gate Charge @ Vgs

60 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

5.15mm

Transistor Material

Si

Height

20.15mm

Product details

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more