Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Series
DeepGate, STripFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
17 nC @ 5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4mm
Length
5mm
Height
1.65mm
Country of Origin
China
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
SR 9,250.00
SR 3.70 Each (On a Reel of 2500) (ex VAT)
SR 10,637.50
SR 4.255 Each (On a Reel of 2500) (inc. VAT)
2500
SR 9,250.00
SR 3.70 Each (On a Reel of 2500) (ex VAT)
SR 10,637.50
SR 4.255 Each (On a Reel of 2500) (inc. VAT)
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
2500
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Series
DeepGate, STripFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
17 nC @ 5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4mm
Length
5mm
Height
1.65mm
Country of Origin
China
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


