STMicroelectronics STripFET H7 Type N-Channel Power MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-220

RS Stock No.: 103-2008Brand: STMicroelectronicsManufacturers Part No.: STP310N10F7
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Technical Document

Specifications

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-220

Series

STripFET H7

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

2.7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

180nC

Maximum Power Dissipation Pd

315W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

4.6 mm

Height

15.75mm

Length

10.4mm

Automotive Standard

No

Product details

N-Channel STripFET™ H7 Series, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

SR 978.50

SR 19.57 Each (In a Tube of 50) (ex VAT)

SR 1,125.28

SR 22.506 Each (In a Tube of 50) (inc. VAT)

STMicroelectronics STripFET H7 Type N-Channel Power MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-220

SR 978.50

SR 19.57 Each (In a Tube of 50) (ex VAT)

SR 1,125.28

SR 22.506 Each (In a Tube of 50) (inc. VAT)

STMicroelectronics STripFET H7 Type N-Channel Power MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-220

Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-220

Series

STripFET H7

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

2.7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

180nC

Maximum Power Dissipation Pd

315W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

4.6 mm

Height

15.75mm

Length

10.4mm

Automotive Standard

No

Product details

N-Channel STripFET™ H7 Series, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more