Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220
Series
STripFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.4mm
Typical Gate Charge @ Vgs
38 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.6mm
Height
15.75mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
SR 494.00
SR 9.88 Each (In a Tube of 50) (ex VAT)
SR 568.10
SR 11.362 Each (In a Tube of 50) (inc. VAT)
50
SR 494.00
SR 9.88 Each (In a Tube of 50) (ex VAT)
SR 568.10
SR 11.362 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220
Series
STripFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.4mm
Typical Gate Charge @ Vgs
38 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.6mm
Height
15.75mm
Minimum Operating Temperature
-55 °C
Product details


