Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
9A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
900mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
72nC
Maximum Power Dissipation Pd
40W
Maximum Gate Source Voltage Vgs
30 V
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Width
4.6 mm
Length
10.4mm
Height
9.3mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
SR 810.50
SR 16.21 Each (In a Tube of 50) (ex VAT)
SR 932.08
SR 18.642 Each (In a Tube of 50) (inc. VAT)
50
SR 810.50
SR 16.21 Each (In a Tube of 50) (ex VAT)
SR 932.08
SR 18.642 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
9A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
900mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
72nC
Maximum Power Dissipation Pd
40W
Maximum Gate Source Voltage Vgs
30 V
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Width
4.6 mm
Length
10.4mm
Height
9.3mm
Standards/Approvals
No
Automotive Standard
No
Product details


