Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
100 V
Series
STripFET II
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Width
6.2mm
Length
6.6mm
Typical Gate Charge @ Vgs
38 nC @ 5 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
2.4mm
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
SR 13,900.00
SR 5.56 Each (On a Reel of 2500) (ex VAT)
SR 15,985.00
SR 6.394 Each (On a Reel of 2500) (inc. VAT)
2500
SR 13,900.00
SR 5.56 Each (On a Reel of 2500) (ex VAT)
SR 15,985.00
SR 6.394 Each (On a Reel of 2500) (inc. VAT)
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
2500
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
100 V
Series
STripFET II
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Width
6.2mm
Length
6.6mm
Typical Gate Charge @ Vgs
38 nC @ 5 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
2.4mm
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


