Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
13A
Maximum Drain Source Voltage Vds
550V
Package Type
TO-252
Series
MDmesh M5
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
240mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.5V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
31nC
Maximum Power Dissipation Pd
90W
Maximum Gate Source Voltage Vgs
25 V
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
6.2 mm
Length
6.6mm
Height
2.4mm
Automotive Standard
No
Product details
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
SR 15.99
SR 15.99 Each (ex VAT)
SR 18.39
SR 18.39 Each (inc. VAT)
Standard
1
SR 15.99
SR 15.99 Each (ex VAT)
SR 18.39
SR 18.39 Each (inc. VAT)
Stock information temporarily unavailable.
Standard
1
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
13A
Maximum Drain Source Voltage Vds
550V
Package Type
TO-252
Series
MDmesh M5
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
240mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.5V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
31nC
Maximum Power Dissipation Pd
90W
Maximum Gate Source Voltage Vgs
25 V
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
6.2 mm
Length
6.6mm
Height
2.4mm
Automotive Standard
No
Product details
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.


