STMicroelectronics STB11NM80 Type N-Channel MDmesh Power MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-263

RS Stock No.: 188-8280Brand: STMicroelectronicsManufacturers Part No.: STB11NM80T4
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MDmesh Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-263

Series

STB11NM80

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.4Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-65°C

Typical Gate Charge Qg @ Vgs

43.6nC

Forward Voltage Vf

0.86V

Maximum Operating Temperature

150°C

Width

9.35 mm

Height

4.37mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

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Stock information temporarily unavailable.

SR 21,000.00

SR 21.00 Each (On a Reel of 1000) (ex VAT)

SR 24,150.00

SR 24.15 Each (On a Reel of 1000) (inc. VAT)

STMicroelectronics STB11NM80 Type N-Channel MDmesh Power MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-263

1000

Available in multiples of 1000
1000SR 21,000.00
2000SR 42,000.00
3000SR 63,000.00
4000SR 84,000.00
5000SR 105,000.00
6000SR 126,000.00
7000SR 147,000.00
8000SR 168,000.00
9000SR 189,000.00
10000SR 210,000.00
11000SR 231,000.00
12000SR 252,000.00
13000SR 273,000.00
14000SR 294,000.00
15000SR 315,000.00

SR 21,000.00

SR 21.00 Each (On a Reel of 1000) (ex VAT)

SR 24,150.00

SR 24.15 Each (On a Reel of 1000) (inc. VAT)

STMicroelectronics STB11NM80 Type N-Channel MDmesh Power MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-263

Stock information temporarily unavailable.

1000

Available in multiples of 1000
1000SR 21,000.00
2000SR 42,000.00
3000SR 63,000.00
4000SR 84,000.00
5000SR 105,000.00
6000SR 126,000.00
7000SR 147,000.00
8000SR 168,000.00
9000SR 189,000.00
10000SR 210,000.00
11000SR 231,000.00
12000SR 252,000.00
13000SR 273,000.00
14000SR 294,000.00
15000SR 315,000.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MDmesh Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-263

Series

STB11NM80

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.4Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-65°C

Typical Gate Charge Qg @ Vgs

43.6nC

Forward Voltage Vf

0.86V

Maximum Operating Temperature

150°C

Width

9.35 mm

Height

4.37mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more