STMicroelectronics G-HEMT P-Channel Power MOSFET, 6 A, 700 V Enhancement, 2-Pin TO-252 SGT350R70GTK

RS Stock No.: 719-637Brand: STMicroelectronicsManufacturers Part No.: SGT350R70GTK
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

P-Channel

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

700V

Package Type

TO-252

Series

G-HEMT

Mount Type

Surface Mount

Pin Count

2

Maximum Drain Source Resistance Rds

350mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

1.5nC

Maximum Power Dissipation Pd

47W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

6.2mm

Height

2.4mm

Country of Origin

China

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Stock information temporarily unavailable.

SR 15,000.00

SR 6.00 Each (On a Reel of 2500) (ex VAT)

SR 17,250.00

SR 6.90 Each (On a Reel of 2500) (inc. VAT)

STMicroelectronics G-HEMT P-Channel Power MOSFET, 6 A, 700 V Enhancement, 2-Pin TO-252 SGT350R70GTK

2500

Available in multiples of 2500
2500SR 15,000.00
5000SR 30,000.00
7500SR 45,000.00
10000SR 60,000.00
12500SR 75,000.00
15000SR 90,000.00
17500SR 105,000.00
20000SR 120,000.00
22500SR 135,000.00
25000SR 150,000.00
27500SR 165,000.00
30000SR 180,000.00
32500SR 195,000.00
35000SR 210,000.00
37500SR 225,000.00

SR 15,000.00

SR 6.00 Each (On a Reel of 2500) (ex VAT)

SR 17,250.00

SR 6.90 Each (On a Reel of 2500) (inc. VAT)

STMicroelectronics G-HEMT P-Channel Power MOSFET, 6 A, 700 V Enhancement, 2-Pin TO-252 SGT350R70GTK

Stock information temporarily unavailable.

2500

Available in multiples of 2500
2500SR 15,000.00
5000SR 30,000.00
7500SR 45,000.00
10000SR 60,000.00
12500SR 75,000.00
15000SR 90,000.00
17500SR 105,000.00
20000SR 120,000.00
22500SR 135,000.00
25000SR 150,000.00
27500SR 165,000.00
30000SR 180,000.00
32500SR 195,000.00
35000SR 210,000.00
37500SR 225,000.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

P-Channel

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

700V

Package Type

TO-252

Series

G-HEMT

Mount Type

Surface Mount

Pin Count

2

Maximum Drain Source Resistance Rds

350mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

1.5nC

Maximum Power Dissipation Pd

47W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

6.2mm

Height

2.4mm

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more