STMicroelectronics SCTWA90N65G2V-4 SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4

RS Stock No.: 213-3943Brand: STMicroelectronicsManufacturers Part No.: SCTWA90N65G2V-4
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

119 A

Maximum Drain Source Voltage

650 V

Series

SCTWA90N65G2V-4

Package Type

HiP247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.024 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

SiC

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Stock information temporarily unavailable.

SR 5,034.00

SR 167.80 Each (In a Tube of 30) (ex VAT)

SR 5,789.10

SR 192.97 Each (In a Tube of 30) (inc. VAT)

STMicroelectronics SCTWA90N65G2V-4 SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4

30

Available in multiples of 30
30SR 5,034.00
60SR 10,068.00
90SR 15,102.00
120SR 20,136.00
150SR 25,170.00
180SR 30,204.00
210SR 35,238.00
240SR 40,272.00
270SR 45,306.00
300SR 50,340.00
330SR 55,374.00
360SR 60,408.00
390SR 65,442.00
420SR 70,476.00
450SR 75,510.00

SR 5,034.00

SR 167.80 Each (In a Tube of 30) (ex VAT)

SR 5,789.10

SR 192.97 Each (In a Tube of 30) (inc. VAT)

STMicroelectronics SCTWA90N65G2V-4 SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4
Stock information temporarily unavailable.

30

Available in multiples of 30
30SR 5,034.00
60SR 10,068.00
90SR 15,102.00
120SR 20,136.00
150SR 25,170.00
180SR 30,204.00
210SR 35,238.00
240SR 40,272.00
270SR 45,306.00
300SR 50,340.00
330SR 55,374.00
360SR 60,408.00
390SR 65,442.00
420SR 70,476.00
450SR 75,510.00

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

119 A

Maximum Drain Source Voltage

650 V

Series

SCTWA90N65G2V-4

Package Type

HiP247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.024 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more