STMicroelectronics SCTH90 Type N-Channel MOSFET, 116 A, 650 V Enhancement, 7-Pin H2PAK SCTH90N65G2V-7

RS Stock No.: 201-0869Brand: STMicroelectronicsManufacturers Part No.: SCTH90N65G2V-7
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

116A

Maximum Drain Source Voltage Vds

650V

Series

SCTH90

Package Type

H2PAK

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

157nC

Maximum Power Dissipation Pd

484W

Maximum Gate Source Voltage Vgs

22 V

Maximum Operating Temperature

175°C

Height

10.4mm

Standards/Approvals

No

Width

4.8 mm

Length

15.25mm

Automotive Standard

No

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Stock information temporarily unavailable.

SR 169.35

SR 169.35 Each (ex VAT)

SR 194.75

SR 194.75 Each (inc. VAT)

STMicroelectronics SCTH90 Type N-Channel MOSFET, 116 A, 650 V Enhancement, 7-Pin H2PAK SCTH90N65G2V-7
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1SR 169.35
2SR 338.70
3SR 508.05
4SR 677.40
5SR 846.75
6SR 1,016.10
7SR 1,185.45
8SR 1,354.80
9SR 1,524.15
10SR 1,693.50
11SR 1,862.85
12SR 2,032.20
13SR 2,201.55
14SR 2,370.90
15SR 2,540.25

SR 169.35

SR 169.35 Each (ex VAT)

SR 194.75

SR 194.75 Each (inc. VAT)

STMicroelectronics SCTH90 Type N-Channel MOSFET, 116 A, 650 V Enhancement, 7-Pin H2PAK SCTH90N65G2V-7

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1SR 169.35
2SR 338.70
3SR 508.05
4SR 677.40
5SR 846.75
6SR 1,016.10
7SR 1,185.45
8SR 1,354.80
9SR 1,524.15
10SR 1,693.50
11SR 1,862.85
12SR 2,032.20
13SR 2,201.55
14SR 2,370.90
15SR 2,540.25

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

116A

Maximum Drain Source Voltage Vds

650V

Series

SCTH90

Package Type

H2PAK

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

157nC

Maximum Power Dissipation Pd

484W

Maximum Gate Source Voltage Vgs

22 V

Maximum Operating Temperature

175°C

Height

10.4mm

Standards/Approvals

No

Width

4.8 mm

Length

15.25mm

Automotive Standard

No

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more