N-Channel MOSFET, 9 A, 80 V, 3-Pin M250 STMicroelectronics LET9045F

RS Stock No.: 178-1387Brand: STMicroelectronicsManufacturers Part No.: LET9045F
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

80 V

Package Type

M250

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Maximum Power Dissipation

108 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-0.5 V, +15 V

Width

6.09mm

Number of Elements per Chip

1

Maximum Operating Temperature

+200 °C

Transistor Material

Si

Length

9.91mm

Height

3.94mm

Typical Power Gain

17.7 dB

Product details

RF MOSFET Transistors, STMicroelectronics

The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

MOSFET Transistors, STMicroelectronics

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SR 581.85

Each (In a Tray of 25) (ex VAT)

SR 669.128

Each (In a Tray of 25) (inc VAT)

N-Channel MOSFET, 9 A, 80 V, 3-Pin M250 STMicroelectronics LET9045F

25

Available in multiples of 25
25SR 14,546.25
50SR 29,092.50
75SR 43,638.75
100SR 58,185.00
125SR 72,731.25
150SR 87,277.50
175SR 101,823.75
200SR 116,370.00
225SR 130,916.25
250SR 145,462.50
275SR 160,008.75
300SR 174,555.00
325SR 189,101.25
350SR 203,647.50
375SR 218,193.75

SR 581.85

Each (In a Tray of 25) (ex VAT)

SR 669.128

Each (In a Tray of 25) (inc VAT)

N-Channel MOSFET, 9 A, 80 V, 3-Pin M250 STMicroelectronics LET9045F
Stock information temporarily unavailable.

25

Available in multiples of 25
25SR 14,546.25
50SR 29,092.50
75SR 43,638.75
100SR 58,185.00
125SR 72,731.25
150SR 87,277.50
175SR 101,823.75
200SR 116,370.00
225SR 130,916.25
250SR 145,462.50
275SR 160,008.75
300SR 174,555.00
325SR 189,101.25
350SR 203,647.50
375SR 218,193.75

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

80 V

Package Type

M250

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Maximum Power Dissipation

108 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-0.5 V, +15 V

Width

6.09mm

Number of Elements per Chip

1

Maximum Operating Temperature

+200 °C

Transistor Material

Si

Length

9.91mm

Height

3.94mm

Typical Power Gain

17.7 dB

Product details

RF MOSFET Transistors, STMicroelectronics

The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more