Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
20 A
Maximum Collector Emitter Voltage
80 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
50 W
Minimum DC Current Gain
40
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.15 x 10.4 x 4.6mm
Maximum Operating Temperature
+150 °C
Product details
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
SR 226.50
SR 4.53 Each (In a Tube of 50) (ex VAT)
SR 260.48
SR 5.21 Each (In a Tube of 50) (inc. VAT)
50
SR 226.50
SR 4.53 Each (In a Tube of 50) (ex VAT)
SR 260.48
SR 5.21 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
50
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
20 A
Maximum Collector Emitter Voltage
80 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
50 W
Minimum DC Current Gain
40
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.15 x 10.4 x 4.6mm
Maximum Operating Temperature
+150 °C
Product details
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.


