Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
100 A
Maximum Collector Emitter Voltage
125 V
Package Type
ISOTOP
Mounting Type
Panel Mount
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Collector Base Voltage
200 V
Maximum Emitter Base Voltage
7 V
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
9.1 x 38.2 x 25.5mm
Maximum Collector Emitter Saturation Voltage
1.5 V
Product details
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
SR 23,424.75
SR 312.33 Each (In a Tube of 75) (ex VAT)
SR 26,938.46
SR 359.18 Each (In a Tube of 75) (inc. VAT)
75
SR 23,424.75
SR 312.33 Each (In a Tube of 75) (ex VAT)
SR 26,938.46
SR 359.18 Each (In a Tube of 75) (inc. VAT)
75
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Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
100 A
Maximum Collector Emitter Voltage
125 V
Package Type
ISOTOP
Mounting Type
Panel Mount
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Collector Base Voltage
200 V
Maximum Emitter Base Voltage
7 V
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
9.1 x 38.2 x 25.5mm
Maximum Collector Emitter Saturation Voltage
1.5 V
Product details
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.